MATHEMATICAL MODELS FOR MICROWAVE FET
Andrey Alexandrovich Kokolov
Journal Title:Theoretical & Applied Science
Currently there are a huge number of field effect transistors nonlinear models, many of which apply to the High-electron-mobility transistor (HEMT). In this article a review and classification of existing nonlinear models of microwave HEMT is performed. This review will be useful to engineers involved in the design of microwave devices to make the choice of microwave transistor models.